Properties of GaN epitaxial layers grown at high growth rates by metalorganic chemical vapor deposition

Author: Kokubun Y.   Nishio J.   Abe M.   Ehara T.   Nakagomi S.  

Publisher: Springer Publishing Company

ISSN: 1543-186X

Source: Journal of Electronic Materials, Vol.30, Iss.1, 2001-01, pp. : 23-26

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