P- and N-type doping of GaN and AlGaN epitaxial layers grown by metalorganic chemical vapor deposition

By Eiting C.   Grudowski P.   Dupuis R.  

Journal of Electronic Materials, Vol. 27, Iss. 4, 1998-04 ,pp. : 206-209

Springer Publishing Company

Access to resources Recommend Favorite

Properties of GaN epitaxial layers grown at high growth rates by metalorganic chemical vapor deposition

By Kokubun Y.   Nishio J.   Abe M.   Ehara T.   Nakagomi S.  

Journal of Electronic Materials, Vol. 30, Iss. 1, 2001-01 ,pp. : 23-26

Springer Publishing Company

Access to resources Recommend Favorite

Effect of gas feeding methods on optical properties of GaN grown by rapid thermal chemical vapor deposition reactor

By Kim Sun   Seo Young   Nahm Kee   Hahn Yun   Shim Hyun   Suh Eun-Kyung   Lim Kee   Lee Hyung  

Journal of Electronic Materials, Vol. 28, Iss. 8, 1999-08 ,pp. : 970-974

Springer Publishing Company

Access to resources Recommend Favorite

InAlN/InGaN/GaN double heterostructure with improved carrier confinement and high-temperature transport performance grown by metal-organic chemical vapor deposition

By ZhaoYi   Jun Shuai Xue   Jin Cheng Zhang   Xiao Wei Zhou   Ya Chao Zhang   HaoYue  

Semiconductor Science and Technology, Vol. 30, Iss. 7, 2015-07 ,pp. : 75005-75009

IOP Publishing

Access to resources Recommend Favorite

Hot plasma chemical vapor deposition of GaN on GaAs(100) substrate

By Wang J.   Zhu Z.   Park K.   Hiraga K.   Yao T.  

Journal of Electronic Materials, Vol. 26, Iss. 3, 1997-03 ,pp. : 232-236

Springer Publishing Company

Access to resources Recommend Favorite