Impurity Band in the Interfacial Region of GaN Films Grown by Hydride Vapor Phase Epitaxy

Author： Hsu J.W.P.   Lang D.V.   Richter S.   Kleiman R.N.   Sergent A.M.   Look D.C.   Molnar R.J.  

Publisher： Springer Publishing Company

ISSN： 1543-186X

Source： Journal of Electronic Materials, Vol.30, Iss.3, 2001-03, pp. : 115-122

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

GaN grown by hydride vapor phase epitaxy on p-type 6H-SiC layers

By Nikolaev A.   Rendakova S.   Nikitina I.   Vassilevski K.   Dmitriev V.  

Journal of Electronic Materials, Vol. 27, Iss. 4, 1998-04 ,pp. : 288-291

Springer Publishing Company

Access to resources Recommend Favorite

Si Doping of GaN in Hydride Vapor-Phase Epitaxy

By Richter E.  

Journal of Electronic Materials, Vol. 42, Iss. 5, 2013-05 ,pp. : 820-825

Springer Publishing Company

Access to resources Recommend Favorite

Optical properties and recombination mechanisms in GaN and GaN:Mg grown by metalorganic vapor phase epitaxy

By Yablonskii G.   Gurskii A.   Lutsenko E.   Marko I.   Schineller B.   Guttzeit A.   Schön O.   Heuken M.   Heime K.   Beccard R.   Schmitz D.   Juergensen H.  

Journal of Electronic Materials, Vol. 27, Iss. 4, 1998-04 ,pp. : 222-228

Springer Publishing Company

Access to resources Recommend Favorite

Structural study of GaN grown on (001) GaAs by organometallic vapor phase epitaxy

By Bae In-Tae   Seong Tae-Yeon   Park Young   Kim Eun  

Journal of Electronic Materials, Vol. 28, Iss. 7, 1999-07 ,pp. : 873-877

Springer Publishing Company

Access to resources Recommend Favorite

Growth of thick gan films on rf sputtered ain buffer layer by hydride vapor phase epitaxy

By Lee Heon   Yuri Masaaki   Ueda Tetsuzo   Harris James   Sin Kyusik  

Journal of Electronic Materials, Vol. 26, Iss. 8, 1997-08 ,pp. : 898-902

Springer Publishing Company

Access to resources Recommend Favorite