Nucleation of ZnTe on the As-Terminated Si(112) Surface

Author： Jaime-Vasquez M.   Martinka M.   Jacobs R.N.   Benson J.D.  

Publisher： Springer Publishing Company

ISSN： 1543-186X

Source： Journal of Electronic Materials, Vol.36, Iss.8, 2007-08, pp. : 905-909

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

CdZnTe heteroepitaxy on 3″ (112) Si: Interface, surface, and layer characteristics

By Dhar N.   Boyd P.   Martinka M.   Dinan J.   Almeida L.   Goldsman N.  

Journal of Electronic Materials, Vol. 29, Iss. 6, 2000-06 ,pp. : 748-753

Springer Publishing Company

Access to resources Recommend Favorite

HgCdTe heteroepitaxy on three-inch (112) CdZnTe/Si: Ellipsometric control of substrate temperature

By Almeida L.   Dhar N.   Martinka M.   Dinan J.  

Journal of Electronic Materials, Vol. 29, Iss. 6, 2000-06 ,pp. : 754-759

Springer Publishing Company

Access to resources Recommend Favorite

Microstructure of Heteroepitaxial ZnTe Grown by Molecular Beam Epitaxy on Si(211) Substrates

By Wang X.  

Journal of Electronic Materials, Vol. 40, Iss. 8, 2011-08 ,pp. : 1860-1866

Springer Publishing Company

Access to resources Recommend Favorite

Dislocation Analysis in (112)B HgCdTe/CdTe/Si

By Benson J.  

Journal of Electronic Materials, Vol. 40, Iss. 8, 2011-08 ,pp. : 1847-1853

Springer Publishing Company

Access to resources Recommend Favorite

Characterization of Dislocations in (112)B HgCdTe/CdTe/Si

By Benson J.  

Journal of Electronic Materials, Vol. 39, Iss. 7, 2010-07 ,pp. : 1080-1086

Springer Publishing Company

Access to resources Recommend Favorite