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IOP Publishing

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High on/off current ratio AlGaN/GaN MOS-HEMTs employing RF-sputtered HfO₂ gate insulators

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Breakdown voltage and current collapse of F-plasma treated AlGaN/GaN HEMTs

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Inverse temperature dependence of reverse gate leakage current in AlGaN/GaN HEMT

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Nonpolar AlGaN/GaN HFETs with a normally off operation

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