Thermoelectric Properties of Sb-Doped Mg 2 Si 0.3 Sn 0.7

By Liu Wei  

Journal of Electronic Materials, Vol. 40, Iss. 5, 2011-05 ,pp. : 1062-1066

Springer Publishing Company

Access to resources Recommend Favorite

Improved Thermoelectric Properties of Al-Doped Higher Manganese Silicide Prepared by a Rapid Solidification Method

By Luo Wenhui  

Journal of Electronic Materials, Vol. 40, Iss. 5, 2011-05 ,pp. : 1233-1237

Springer Publishing Company

Access to resources Recommend Favorite

Structural and electrical anisotropies of Si-doped a -plane (11-20) GaN films with different SiN x interlayers

By Ji Hoon Kim   Hwang Sung-Min   Yong Gon Seo   Kwang Hyeon Baik   Jung Ho Park  

Semiconductor Science and Technology, Vol. 28, Iss. 8, 2013-08 ,pp. : 85007-85014

IOP Publishing

Access to resources Recommend Favorite

Thermoelectric Behavior of Sb- and Al-Doped n -Type Mg 2 Si Device Under Large Temperature Differences

By Sakamoto Tatsuya  

Journal of Electronic Materials, Vol. 40, Iss. 5, 2011-05 ,pp. : 629-634

Springer Publishing Company

Access to resources Recommend Favorite

A Spectrum Image Cathodoluminescence Study of Dislocations in Si-Doped Liquid-Encapsulated Czochralski GaAs Crystals

By González M.A.  

Journal of Electronic Materials, Vol. 39, Iss. 6, 2010-06 ,pp. : 781-786

Springer Publishing Company

Access to resources Recommend Favorite