Gate-oxide thickness effects on hot-carrier-induced degradation in n-MOSFETs

By Yuan J. S.  

International Journal of Electronics, Vol. 85, Iss. 1, 1998-07 ,pp. : 1-9

Taylor & Francis Ltd

Access to resources Recommend Favorite

Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc 2 O 3 gate dielectric or surface passivation

By Luo B.   Mehandru R.   Kim J.   Ren F.   Gila B.P.   Onstine A.H.   Abernathy C.R.   Pearton S.J.   Gotthold D.   Birkhahn R.   Peres B.   Fitch R.C.   Moser N.   Gillespie J.K.   Jessen G.H.   Jenkins T.J.   Yannuzi M.J.   Via G.D.   Crespo A.  

Solid-State Electronics, Vol. 47, Iss. 10, 2003-10 ,pp. : 1781-1786

Elsevier

Access to resources Recommend Favorite

Trapped charge effects in AlGaN/GaN metal-oxide-semiconductor structures with Al₂O₃ and ZrO₂ gate insulator

By Stoklas R   Gregušová D   Hušeková K   Marek J   Kordoš P  

Semiconductor Science and Technology, Vol. 29, Iss. 4, 2014-04 ,pp. : 45003-45007

IOP Publishing

Access to resources Recommend Favorite

Small signal measurement of Sc 2 O 3 AlGaN/GaN moshemts

By Luo B.   Mehandru R.   Kang B.S.   Kim J.   Ren F.   Gila B.P.   Onstine A.H.   Abernathy C.R.   Pearton S.J.   Gotthold D.   Birkhahn R.   Peres B.   Fitch R.   Gillespie J.K.   Jenkins T.   Sewell J.   Via D.   Crespo A.  

Solid-State Electronics, Vol. 48, Iss. 2, 2004-02 ,pp. : 355-358

Elsevier

Access to resources Recommend Favorite

Thin-barrier enhancement-mode AlGaN/GaN MIS-HEMT using ALD Al2O3 as gate insulator

By Zheli Wang   Jianjun Zhou   Yuechan Kong   Cen Kong   Xun Dong   Yang Yang   Tangsheng Chen  

Journal of Semiconductors, Vol. 36, Iss. 9, 2015-09 ,pp. : 94004-94007

IOP Publishing

Access to resources Recommend Favorite