Photoluminescence studies of rare earth (Er, Eu, Tm) in situ doped GaN

By Hommerich U.   Nyein E.E.   Lee D.S.   Heikenfeld J.   Steckl A.J.   Zavada J.M.  

Materials Science and Engineering: B, Vol. 105, Iss. 1, 2003-12 ,pp. : 90-95

Elsevier

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Er-defect complexes and isolated Er center spectroscopy in Er-implanted GaN

By Braud A.   Doualan J.L.   Moncorge R.   Pipeleers B.   Vantomme A.  

Materials Science and Engineering: B, Vol. 105, Iss. 1, 2003-12 ,pp. : 100-104

Elsevier

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In situ investigation for polarity-controlled epitaxy processes of GaN and AlN in MBE and MOVPE growth

By Yoshikawa A.   Xu K.  

Optical Materials, Vol. 23, Iss. 1, 2003-07 ,pp. : 7-14

Elsevier

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Lattice dynamics behavior in GaN doped with Mg, As, Si, and C

By Aouas M.R.   Sekkal W.   Zaoui A.  

Materials Chemistry and Physics, Vol. 83, Iss. 1, 2004-01 ,pp. : 48-53

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The Structural and Optical Properties of Be-Doped GaAs Grown by MBE

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Advanced Materials Research, Vol. 2015, Iss. 1118, 2015-08 ,pp. : 111-117

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