n-GaAs BAND-EDGE REPOSITIONING BY MODIFICATION WITH METALLOPORPHYRIN/POLYSILOXANE MATRICES

By HILAL HIKMAT   MASOUD MOAYYAD   SHAKHSHIR SAMAR   JISRAWI NAJEH  

Active and Passive Electronic Components, Vol. 26, Iss. 1, 2003-01 ,pp. : 11-21

Taylor & Francis Ltd

Access to resources Recommend Favorite

Near band-edge optical properties of cubic GaN with and without carbon doping

By Fernandez J.R.L.   Cerdeira F.   Meneses E.A.   Soares J.A.N.T.   Noriega O.C.   Leite J.R.   As D.J.   Kohler U.   Salazar D.G.P.   Schikora D.   Lischka K.  

Microelectronics, Vol. 35, Iss. 1, 2004-01 ,pp. : 73-77

Elsevier

Access to resources Recommend Favorite

Absorption of Narrow-Gap HgCdTe Near the Band Edge Including Nonparabolicity and the Urbach Tail

By Chang Yong   Guha S.   Grein C.H.   Velicu S.   Flatté M.E.   Nathan V.   Sivananthan S.  

Journal of Electronic Materials, Vol. 36, Iss. 8, 2007-08 ,pp. : 1000-1006

Springer Publishing Company

Access to resources Recommend Favorite

Properties of sub-band edge states in AlInN studied by time-resolved photoluminescence of a AlInN/GaN heterostructure

By Marcinkevičius Saulius   Sztein Alexander   Nakamura Shuji   Speck James S  

Semiconductor Science and Technology, Vol. 30, Iss. 11, 2015-11 ,pp. : 115017-115022

IOP Publishing

Access to resources Recommend Favorite

Composite derivative and edge detection

By Pan Xiang   Ye Yongqiang   Cheng Jinmei   Wang Danwei   Jiang Bin  

Signal, Image and Video Processing, Vol. 8, Iss. 3, 2014-03 ,pp. : 523-531

Springer Publishing Company

Access to resources Recommend Favorite