Properties of sub-band edge states in AlInN studied by time-resolved photoluminescence of a AlInN/GaN heterostructure

Author: Marcinkevičius Saulius   Sztein Alexander   Nakamura Shuji   Speck James S  

Publisher: IOP Publishing

E-ISSN: 1361-6641|30|11|115017-115022

ISSN: 0268-1242

Source: Semiconductor Science and Technology, Vol.30, Iss.11, 2015-11, pp. : 115017-115022

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