Numerical study on strained InGaAsP/InGaP quantum wells for 850-nm vertical-cavity surface-emitting lasers

Author: Kuo Y.-K.   Chen J.-R.   Chen M.-L.   Liou B.-T.  

Publisher: Springer Publishing Company

ISSN: 0946-2171

Source: Applied Physics B, Vol.86, Iss.4, 2007-03, pp. : 623-631

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Abstract