Tuning vertically stacked InAs/GaAs quantum dot properties under spacer thickness effects for 1.3 m emission

Author: Bouzaiene L.  

Publisher: Springer Publishing Company

ISSN: 0947-8396

Source: Applied Physics A, Vol.79, Iss.3, 2004-08, pp. : 587-591

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content