Period of time: 2013年6期
Publisher: MAIK Nauka/Interperiodica
Founded in: 1967
Total resources: 5
ISSN: 1063-7826
Subject: O4 Physics
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Semiconductors,volume 45,issue 6
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Model of boron diffusion from gas phase in silicon carbide
Semiconductors,volume 45,issue 6 , Vol. 45, Iss. 6, 2011-06 , pp.Electronic structure and spectral characteristics of Zn-substituted clathrate silicides
By Borshch N.,Pereslavtseva N.,Kurganskii S. in (2011)
Semiconductors,volume 45,issue 6 , Vol. 45, Iss. 6, 2011-06 , pp.Energy of impurity resonance states in lead telluride with different contents of thallium impurity
By Nemov S.,Ravich Yu.,Korchagin V. in (2011)
Semiconductors,volume 45,issue 6 , Vol. 45, Iss. 6, 2011-06 , pp.Vacancy model of micropipe annihilation in epitaxial silicon carbide layers
By Davydov S.,Lebedev A. in (2011)
Semiconductors,volume 45,issue 6 , Vol. 45, Iss. 6, 2011-06 , pp.By Shcherbachev K.,Bublik V.,Mordkovich V.,Pazhin D. in (2011)
Semiconductors,volume 45,issue 6 , Vol. 45, Iss. 6, 2011-06 , pp.Physical properties of SnS thin films fabricated by hot wall deposition
By Bashkirov S.,Gremenok V.,Ivanov V. in (2011)
Semiconductors,volume 45,issue 6 , Vol. 45, Iss. 6, 2011-06 , pp.By Kladko V.,Kuchuk A.,Safriuk N.,Machulin V.,Belyaev A.,Konakova R.,Yavich B.,Ber B.,Kazantsev D. in (2011)
Semiconductors,volume 45,issue 6 , Vol. 45, Iss. 6, 2011-06 , pp.By Požela J.,Požela K.,Raguotis R.,Jucienė V. in (2011)
Semiconductors,volume 45,issue 6 , Vol. 45, Iss. 6, 2011-06 , pp.