DX-centers and long-term effects in the high-frequency hopping conductance in Si-doped GaAs/Al 0.3 Ga 0.7 As heterostructures in the quantum Hall regime: acoustical studies

Author: Drichko I.L.   Diakonov A.M.   Smirnov I.Y.   Preobrazhenskii V.V.   Toropov A.I.   Galperin Y.M.  

Publisher: Elsevier

ISSN: 1386-9477

Source: Physica E, Vol.17, Iss.unknown, 2003-04, pp. : 276-279

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract