Effect of Ge-dots buried below the interface on the transport properties of Schottky diodes

Author： Hattab A.   Dufaye F.   Meyer F.   Yam V.   Le Thanh V.   Bouchier D.   Meyer R.   Schneegans O.   Clerc C.  

Publisher： Elsevier

ISSN： 1386-9477

Source： Physica E, Vol.17, Iss.unknown, 2003-04, pp. : 648-650

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