A multi-defect initialization-based percolation model: a successful scheme to explain dielectric breakdown in MOS devices

Author： dos Santos R.P.   Nobre F.V.J.   Costa U.M.S.   Freire V.N.   Lyra M.L.   da Silva E.F.  

Publisher： Elsevier

ISSN： 1386-9477

Source： Physica E, Vol.17, Iss.unknown, 2003-04, pp. : 645-647

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