Structural characterization of SiGe step graded buffer layers grown on prestructured Si[001] substrates by molecular beam epitaxy

By Muller E.   Hartmann R.   David C.   Grutzmacher D.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 92-95

Elsevier

Access to resources Recommend Favorite

Novel strained Si/relaxed SiGe channel PMOSFETs

By Li C.   Luo G.   Liu Z.   Chen P.   Tsien P.-H.  

Thin Solid Films, Vol. 409, Iss. 1, 2002-04 ,pp. : 112-115

Elsevier

Access to resources Recommend Favorite

Defect distribution and morphology development of SiGe layers grown on Si(100) substrates by LPE

By Sembian A.M.   Konuma M.   Silier I.   Gutjahr A.   Rollbuhler N.   Banhart F.   Moorthy Babu S.   Ramasamy P.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 116-119

Elsevier

Access to resources Recommend Favorite

Influence of cooling rate on the dislocations and related luminescence in LPE SiGe layers grown on Si (100) substrates

By Sembian A.M.   Banhart F.   Konuma M.   Weber J.   Moorthy Babu S.   Ramasamy P.  

Thin Solid Films, Vol. 372, Iss. 1, 2000-09 ,pp. : 1-5

Elsevier

Access to resources Recommend Favorite

Alternatives to thick MBE-grown relaxed SiGe buffers

By Hackbarth T.   Herzog H.-J.   Zeuner M.   Hock G.   Fitzgerald E.A.   Bulsara M.   Rosenblad C.   von Kanel H.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 148-151

Elsevier

Access to resources Recommend Favorite