Author： Kondo M. Kurasawa M. Cross J. Tsukada M. Maruyama K. Kurihara K.
Publisher： Taylor & Francis Ltd
ISSN： 0015-0193
Source： Ferroelectrics, Vol.334, Iss.2, 2006-01, pp. : 267-275
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Abstract
An all-epitaxial stacked ferroelectric capacitor, from the conductive plug to the top electrode, fabricated on a silicon substrate with a metal-oxide-semiconductor field-effect transistor is described. An SrRuO 3 /Pb(Zr,Ti)O 3 /Ir/TiN/Si(100) heteroepitaxial structure with epitaxially grown thin films on a silicon substrate had good crystallinity. Each thin film was oriented in the (100) direction with a cube-on-cube alignment on the silicon crystal lattice. The switching charges of fabricated epitaxial capacitors were around 36 μ C/cm 2 . The charge was less dependent on size for capacitors larger than 5 × 5 μ m.
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