Author： Gao L. N. Song S. N. Zhai J. W. Yao X.
Publisher： Taylor & Francis Ltd
ISSN： 0015-0193
Source： Ferroelectrics, Vol.357, Iss.1, 2007-01, pp. : 142-147
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Abstract
The undoped, homogeneous and graded Co-doped (Ba0.7Sr0.3) TiO3 (BST) thin films with compositionally gradient from 0 mol% to 5 mol% were prepared on Pt /Ti /SiO2/Si (100) substrates by sol-gel technique. All of the thin films crystallized into a pure perovskite structure after post-deposition annealing. Dielectric properties of undoped, homogeneous and graded Co-doped BST thin films were investigated as a function of frequency and direct current bias field. These results showed that the graded acceptor doping was a promising technique to reduce the loss tangent and leakage current while maintaining weak change in tunability of BST thin film.
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