Surface relaxation of strained semiconductor heterostructures revealed by finite-element calculations and transmission electron microscopy

Author: Jacob D.   Androussi Y.   Benabbas T.   Francois P.   Lefebvre A.  

Publisher: Taylor & Francis Ltd

ISSN: 0141-8610

Source: Philosophical Magazine. A. Physics of Condensed Matter. Defects and Mechanical Properties, Vol.78, Iss.4, 1998-10, pp. : 879-891

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