Crystallization of amorphous Si 0.5 Ge 0.5 films studied by means of in-situ X-ray diffraction and in-situ transmission electron microscopy

By Edelman F.   Raz T.   Komem Y.   Zaumseil P.   Osten H. -J.   Capitan M.  

Philosophical Magazine. A. Physics of Condensed Matter. Defects and Mechanical Properties, Vol. 79, Iss. 11, 1999-11 ,pp. : 2617-2628

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In situ transmission electron microscope observations of misfit strain relaxation and coalescence stages of Si 1-x Ge x on Si(001)

By Hiroyama Y.   Tamura M.  

Thin Solid Films, Vol. 334, Iss. 1, 1998-12 ,pp. : 1-5

Elsevier

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Transmission electron microscopy studies of the microstructure of Si layers grown on GaAs(001) under an excess As or Al flux

By Carlino E.   Sorba L.   Franciosi A.   Heun S.   Muller B. H.  

Philosophical Magazine B, Vol. 80, Iss. 5, 2000-05 ,pp. : 1055-1069

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Interaction between microstructure and multiple-step transformation in binary NiTi alloys using in-situ transmission electron microscopy observations

By Bataillard L.   Bidaux J.-E.   Gotthardt R.  

Philosophical Magazine. A. Physics of Condensed Matter. Defects and Mechanical Properties, Vol. 78, Iss. 2, 1998-08 ,pp. : 327-344

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A transmission electron microscopy study of composition in Si1-xGex/Si (001) quantum dots

By Androussi Y.  

Philosophical Magazine, Vol. 87, Iss. 10, 2007-04 ,pp. : 1531-1543

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