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By Stoklas R   Gregušová D   Hušeková K   Marek J   Kordoš P  

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IOP Publishing

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On laterally spreading of space-charge-region in planar metal-semiconductor-metal structures

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Effects of wet-ROA on shallow interface traps of n-type 4H-SiC MOS capacitors

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Thin-barrier enhancement-mode AlGaN/GaN MIS-HEMT using ALD Al2O3 as gate insulator

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