Author： Nakashima Hiroshi Uozumi Kiyohiko
Publisher： Taylor & Francis Ltd
ISSN： 1362-3060
Source： International Journal of Electronics, Vol.85, Iss.2, 1998-08, pp. : 145-151
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Abstract
We theoretically study single electron transport through voltage biased two small tunnel junctions of trapezoidal barriers connected in series, and show that this structure possesses a characteristic feature of unilateral current accompanied with Coulomb steps. Due to such a characteristic feature, the structure is expected to serve as a single electron transistor giving a very good performance. Our analysis is based on the semi-classical tunnelling model, but the tunnel rates through each junction are determined by directly calculating a golden rule equation.
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