A two-dimensional electrostatic model for degraded LDD-nMOSFETs including spatial and energy distribution of hot-carrier-induced interface traps

Author： El-Sayed M. Salah N.

Publisher： Taylor & Francis Ltd

ISSN： 1362-3060

Source： International Journal of Electronics, Vol.88, Iss.5, 2001-05, pp. : 507-516

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