Author： Misiuk Andrzej Bak-Misiuk Jadwiga Barcz Adam Romanowski P. Surma Barbara Wnuk Artur
Publisher： Taylor & Francis Ltd
ISSN： 0895-7959
Source： International Journal of High Pressure Research, Vol.31, Iss.1, 2011-03, pp. : 102-105
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Abstract
Implantation of any ions at a sufficiently high dose and energy (E) into single-crystalline Si leads to the creation of amorphous Si (aSi), with damages peaking near the projected range (Rp) of implanted species. Enhanced hydrostatic pressure (HP) at a high temperature (HT) influences the recrystallization of aSi. The structure of self-implanted Czochralski silicon (Si+ dose, D=2×1016 cm-2, E=150 keV, Rp=0.22 μm) processed for 5 h at 1400 or 1520 K under HPs up to 1.45 GPa was investigated by X-ray, secondary ion mass spectrometry and photoluminescence methods. The implantation of Si produces vacancies (V) and self-interstitials (Sii). Vacancies and Siis form complex defects at HT-HP, also with contaminants (e.g. oxygen, always present in Czochralski silicon). The mobility and recombination of V and Sii as well as the kinetics of recrystallization are affected by HP, thus processing at HT-HP affects the recovery of aSi.
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