A study of GaInP/GaAs interfaces: metallurgical coupling of successive quantum wells

Author： Schuler O.   dehaese O.   Wallart X.   Mollot F.  

Publisher： Academic Press

ISSN： 0749-6036

Source： Superlattices and Microstructures, Vol.23, Iss.2, 1998-02, pp. : 265-271

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

RAMAN SCATTERING IN MBE GaInAs-InP QUANTUM WELLS

By  

Le Journal de Physique Colloques, Vol. 48, Iss. C5, 1987-11 ,pp. : C5-483-C5-486

Edp Sciences

Access to resources Recommend Favorite

OPTICAL INVESTIGATION OF InGaAs-InP QUANTUM WELLS

By  

Le Journal de Physique Colloques, Vol. 48, Iss. C5, 1987-11 ,pp. : C5-143-C5-146

Edp Sciences

Access to resources Recommend Favorite

Photodiffraction in InGaAs/InGaAsP multiple quantum wells enclosed in a microcavity

By Grac R.   Pugnet M.   Collet J.H.   Lambert B.   de Matos C.   L'Haridon H.   Le Corre A.   White J.O.  

Superlattices and Microstructures, Vol. 22, Iss. 4, 1997-12 ,pp. : 505-509

Academic Press

Access to resources Recommend Favorite

Extremely flat interfaces in In 0.04 Ga 0.96 As/Al 0.3 Ga 0.7 As quantum wells grown on (411)A In 0.04 Ga 0.96 As substrates by MBE

By Hiyamizu S.   Saeki T.   Motokawa T.   Shimomura S.   Kitada T.   Adachi A.   Okamoto Y.   Kusunoki T.   Nakajima K.   Sano N.  

Superlattices and Microstructures, Vol. 21, Iss. 1, 1997-01 ,pp. : 107-111

Academic Press

Access to resources Recommend Favorite

Excitonic transitions in GaInAs/GaAs surface quantum wells

By  

Le Journal de Physique IV, Vol. 03, Iss. C5, 1993-10 ,pp. : C5-265-C5-268

Edp Sciences

Access to resources Recommend Favorite