Induced defects in a-Si:H/a-SiNx:H multilayers by use of EMT and PAT

Author： Gu W.Z.   Wang Z.C.   Sun M.X.  

Publisher： Academic Press

ISSN： 0749-6036

Source： Superlattices and Microstructures, Vol.23, Iss.5, 1998-05, pp. : 991-997

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

OPTICAL STUDIES IN a-Si : H/a-SiNx : H SUPERLATTICES

By  

Le Journal de Physique Colloques, Vol. 48, Iss. C5, 1987-11 ,pp. : C5-191-C5-194

Edp Sciences

Access to resources Recommend Favorite

Impact of thermal annealing on interfacial layer and electrical properties of a-SiNx : H/Si

By Singh Sarab Preet   Vijaya Prakash G.   Ghosh S.   Rai Sanjay   Srivastava P.  

EPL (EUROPHYSICS LETTERS), Vol. 90, Iss. 2, 2010-05 ,pp. : 26002-26002

Edp Sciences

Access to resources Recommend Favorite

AMORPHOUS HYDROGENATED ALLOYS : A COMPARATIVE EXAFS STUDY OF a-Si1-xCx : H, a-Si1- xGex : H, a-SiNx : H AT THE SILICON K-EDGE

By  

Le Journal de Physique Colloques, Vol. 47, Iss. C8, 1986-12 ,pp. : C8-357-C8-361

Edp Sciences

Access to resources Recommend Favorite

PHOTO-CREATION OF DEFECTS IN PLASMA-DEPOSITED a-Si:H

By  

Le Journal de Physique Colloques, Vol. 42, Iss. C4, 1981-10 ,pp. : C4-375-C4-378

Edp Sciences

Access to resources Recommend Favorite

H-initiated extended defects from plasma treatment: Comparison between c-Si and mc-Si

By  

Journal of Physics: Conference Series , Vol. 281, Iss. 1, 2011-02 ,pp. : 212-224

IOP Publishing

Access to resources Recommend Favorite