Author： Kagan M.S. Altukhov I.V. Korolev K.A. Orlov D.V. Sinis V.P. Thomas S.G. Wang K.L. Schmalz K. Yassievich I.N.
Publisher： Academic Press
ISSN： 0749-6036
Source： Superlattices and Microstructures, Vol.25, Iss.1, 1999-01, pp. : 203-206
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Abstract
The temperature dependence of lateral conductivity and hole mobility in boron doped Si/SiGe/Si quantum well structures were studied. The conductivity at the temperatures below 20 K is shown to be due to hopping over B centers while at higher temperatures it is due to two-stage excitation consisting of thermal activation of holes from the ground to strain-split B states and the next hole tunneling into the valence band.
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