Study of In_0.49Ga_0.51P/GaAs/In_0.49Ga_0.51P doubleδ-doped heterojunction bipolar transistor

Author： Wang W-C. Chen J-Y. Pan H-J. Feng S-C. Yu K-H. Liu W-C.

ISSN： 0749-6036

Source： Superlattices and Microstructures, Vol.26, Iss.1, 1999-07, pp. : 23-33

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Abstract

A lattice-matched In_0.49Ga_0.51P/GaAs/In_0.49Ga_0.51P doubleδ -doped heterojunction bipolar transistor, prepared by low-pressure metal organic chemical vapor deposition (LP-MOCVD), is fabricated successfully and reported. Due to the insertion of δ -doped sheets and setback layers both at base–emitter (B–E) and base–collector (B–C) heterojunctions, the potential spikes are suppressed significantly. In addition, the electron blocking effect is removed and a dramatic improvement of current gain is obtained. A modified Ebers–Moll model is employed to study and analyse the device performances. The experimental results show that the common-emitter current gain over 210 at the collector current of 35 mA and an offset voltage∆V_CEsmaller than 50 mV are obtained. Also, a lower knee-shaped voltage of 1.4 V at the collector current of 40 mA is observed. These results indicate that the device studied is a good candidate for high-speed and high-power circuit applications.