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By Cheng S-Y.  

Superlattices and Microstructures, Vol. 30, Iss. 2, 2001-08 ,pp. : 111-117

Academic Press

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An extremely low offset voltage AlInAsGaInAs heterostructure-emitter bipolar transistor

By Tsai J.H.   Cheng S.Y.   Laih L.W.   Liu W.C.   Lin H.H.  

Superlattices and Microstructures, Vol. 23, Iss. 6, 1998-06 ,pp. : 1297-1308

Academic Press

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A new InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT)

By Tsai Jung-Hui   Lee Ching-Sung   Lour Wen-Shiung   Ma Yung-Chun   Ye Sheng-Shiun  

Semiconductors, Vol. 45, Iss. 5, 2011-05 ,pp. : 646-649

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Investigation of barrier tunneling characteristics of symmetrical double quantum well in In_0.25Ga_0.75As/GaAs/In_0.25Ga_0.75As heterostructure

By Orlov L.   Ivina N.   Romanov Yu.   Rubtsova R.  

Physics of the Solid State, Vol. 42, Iss. 3, 2000-03 ,pp. : 548-553

MAIK Nauka/Interperiodica

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Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in an AlGaN/AlN/GaN heterostructure field-effect transistor

By Yuan-Jie Lv   Zhi-Hong Feng   Guo-Dong Gu   Jia-Yun Yin   Yu-Long Fang   Yuan-Gang Wang   Xin Tan   Xing-Ye Zhou   Zhao-Jun Lin   Zi-Wu Ji   Shu-Jun Cai  

Chinese Physics B, Vol. 24, Iss. 8, 2015-08 ,pp. : 87306-87310

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