Stokes shift in one-side modulation-n-doped-strained Ga_xIn_{1 - x}As/InP asymmetric quantum well

By Fanyao Q.   Fonseca A.L.A.   Nunes O.A.C.  

Superlattices and Microstructures, Vol. 26, Iss. 6, 1999-12 ,pp. : 377-394

Academic Press

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Aδ-doped In_0.24Ga_0.76As/GaAs pseudomorphic high electron mobility transistor using a graded superlattice spacer

By Lee C-S.   Hsu W-C.   Li S.S.   Ho P.  

Superlattices and Microstructures, Vol. 29, Iss. 5, 2001-05 ,pp. : 329-334

Academic Press

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Study of In_0.49Ga_0.51P/GaAs/In_0.49Ga_0.51P doubleδ-doped heterojunction bipolar transistor

By Wang W-C.   Chen J-Y.   Pan H-J.   Feng S-C.   Yu K-H.   Liu W-C.  

Superlattices and Microstructures, Vol. 26, Iss. 1, 1999-07 ,pp. : 23-33

Academic Press

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Electronic subband of single Siδ-doped GaAs structures

By Ozturk E.   Ergun Y.   Sari H.   Sokmen I.  

Superlattices and Microstructures, Vol. 28, Iss. 1, 2000-07 ,pp. : 35-45

Academic Press

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Bound-to-extended state absorption in quantum wells confined byδ-like barriers

By Durinyan K.   Petrosyan S.  

Superlattices and Microstructures, Vol. 26, Iss. 4, 1999-10 ,pp. : 263-277

Academic Press

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