Study of In_0.49Ga_0.51P/GaAs/In_0.49Ga_0.51P doubleδ-doped heterojunction bipolar transistor

By Wang W-C.   Chen J-Y.   Pan H-J.   Feng S-C.   Yu K-H.   Liu W-C.  

Superlattices and Microstructures, Vol. 26, Iss. 1, 1999-07 ,pp. : 23-33

Academic Press

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Magnetotransport in modulation-doped In_0.53Ga_0.47As/In_{0. 52}Al_0.48As heterojunctions: in-plane effective mass, quantum and transport mobilities of 2D electrons

By Tiras E.   Cankurtaran M.   Çelik H.   Thoms A.B.   Balkan N.  

Superlattices and Microstructures, Vol. 29, Iss. 2, 2001-02 ,pp. : 147-167

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Nonparabolic tendency of electron effective mass estimated by confined states in In_0.53Ga_0.47As/In_{0. 52}Al_0.48As multi-quantum-well structures

By Tanaka K.   Kotera N.   Nakamura H.  

Superlattices and Microstructures, Vol. 26, Iss. 1, 1999-07 ,pp. : 17-22

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GaAsδ-doped quantum wire superlattice characterization by quantum Hall effect and Shubnikov–de Haas oscillations

By Ferrus T.   Goutiers B.   Galibert J.   Ressier L.   Peyrade J.P.  

Superlattices and Microstructures, Vol. 29, Iss. 2, 2001-02 ,pp. : 99-104

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Electronic subband of single Siδ-doped GaAs structures

By Ozturk E.   Ergun Y.   Sari H.   Sokmen I.  

Superlattices and Microstructures, Vol. 28, Iss. 1, 2000-07 ,pp. : 35-45

Academic Press

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