Temperature dependence of excitonic transitions in Al_xGa_{1 - x}As/GaAs quantum wells

By Lourenço S.A.   Dias I.F.L.   Duarte J.L.   Laureto E.   Iwamoto H.   Meneses E.A.   Leite J.R.  

Superlattices and Microstructures, Vol. 29, Iss. 3, 2001-03 ,pp. : 225-231

Academic Press

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Study of In_0.49Ga_0.51P/GaAs/In_0.49Ga_0.51P doubleδ-doped heterojunction bipolar transistor

By Wang W-C.   Chen J-Y.   Pan H-J.   Feng S-C.   Yu K-H.   Liu W-C.  

Superlattices and Microstructures, Vol. 26, Iss. 1, 1999-07 ,pp. : 23-33

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Stokes shift in one-side modulation-n-doped-strained Ga_xIn_{1 - x}As/InP asymmetric quantum well

By Fanyao Q.   Fonseca A.L.A.   Nunes O.A.C.  

Superlattices and Microstructures, Vol. 26, Iss. 6, 1999-12 ,pp. : 377-394

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Band offsets and properties ofSi_{1 - x}Ge_x/Si material systems

By Ekpunobi A.J.   Animalu A.O.E.  

Superlattices and Microstructures, Vol. 29, Iss. 1, 2001-01 ,pp. : 83-89

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Electronic structure of CuCl_xBr_{1 - x}, CuCl_xI_{1 - x}and CuBr_xI_{1 - x}alloys

By El Haj Hassan F.   Zaoui A.  

Superlattices and Microstructures, Vol. 30, Iss. 2, 2001-08 ,pp. : 75-80

Academic Press

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