Low voltage FE‐STEM for characterization of state‐of‐the‐art silicon SRAM

Author： Nakagawa1 *- Mine   Dunne2 *- Robert   Koike3 Hidemi   Sato3 Mitsugu   Pérez‐Camacho2 Juan J.  

Publisher： Oxford University Press

ISSN： 0022-0744

Source： Journal of Electron Microscopy, Vol.51, Iss.1, 2002-03, pp. : 53-57

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