Author： Konstantinov P.P. Shelimova L.E. Avilov E.S. Kretova M.A. Zemskov V.S.
Publisher： MAIK Nauka/Interperiodica
ISSN： 0020-1685
Source： Inorganic Materials, Vol.37, Iss.7, 2001-07, pp. : 662-668
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Abstract
The Hall coefficient, electrical conductivity, and thermoelectric power of Ge_3Sb_2Te_6, Ge_2Sb_2Te_5, GeSb_2Te_4 , and GeSb_4Te_7were measured over a wide temperature range (R_Hand σ from 77 to 800 K and S from 90 to 450 K). The carrier concentration was varied via compositional changes within the homogeneity regions of the compounds. All of the materials studied were found to be p-type. Some of the alloys have a low lattice thermal conductivity and are, therefore, candidate p-type thermoelectric materials. The temperature-dependent hole mobility data suggest that both acoustic phonons and point defects contribute to the scattering of charge carriers at low temperatures.
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