Author： Kosinova M.L. Rumyantsev Y.M. Golubenko A.N. Fainer N.I. Ayupov B.M. Dolgovesova I.P. Kolesov B.A. Kaichev V.V. Kuznetsov F.A.
Publisher： MAIK Nauka/Interperiodica
ISSN： 0020-1685
Source： Inorganic Materials, Vol.39, Iss.4, 2003-04, pp. : 366-373
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Abstract
Boron carbonitride and boron nitride films were grown by plasma-enhanced chemical vapor deposition using trimethylamineborane and its mixtures with ammonia, hydrogen, or helium. The effects of the starting-mixture composition and substrate temperature on the chemical composition of the deposits was studied by ellipsometry, scanning microscopy, IR spectroscopy, Raman scattering, and x-ray photoelectron spectroscopy. The results indicate that the initial composition of the gas mixture, the nature of the activation gas, and substrate temperature play a key role in determining the deposition kinetics and the physicochemical properties of the deposits. Depending on these process parameters, one can obtain
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