GaAs and AlGaAs photodiodes for ionizing radiation detectors

By Andreev V.M.   Milanova M.M.   Khvostikov V.P.  

Solid-State Electronics, Vol. 47, Iss. 10, 2003-10 ,pp. : 1835-1841

Elsevier

Access to resources Recommend Favorite

A comparison of the 60Co gamma radiation hardness, breakdown characteristics and the effect of SiN x capping on InAlN and AlGaN HEMTs for space applications

By Smith M D   O’Mahony D   Vitobello F   Muschitiello M   Costantino A   Barnes A R   Parbrook P J  

Semiconductor Science and Technology, Vol. 31, Iss. 2, 2016-02 ,pp. : 25008-25016

IOP Publishing

Access to resources Recommend Favorite

Electrical behavior of modulation-and delta-doped Al _x Ga_{1 − x} As/In _y Ga_{1 − y} As/GaAs PHEMT structures

By Galiev G.   Vasil’evskii I.   Klimov E.   Mokerov V.  

Russian Microelectronics, Vol. 35, Iss. 2, 2006-03 ,pp. : 67-73

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

A Study of (In,Ga,Al)As/GaAs Quantum-Dot Heterostructures by X-ray Diffraction and Total Reflection

By Zaitsev A. A.   Mokerov V. G.   Pashaev E. M.   Sutyrin A. G.   Yakunin S. N.  

Russian Microelectronics, Vol. 33, Iss. 1, 2004-01 ,pp. : 27-32

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

GaAs Pixel-Detector Technology for X-ray Medical Imaging: A Review

By Lezhneva G.   Melkadze R.   Khvedelidze L.  

Russian Microelectronics, Vol. 34, Iss. 4, 2005-07 ,pp. : 229-241

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite