Laser simulation of ionizing-radiation effects on silicon ICs: The temperature and doping-level dependence of simulation parameters

By Gadoev S.   Skorobogatov P.  

Russian Microelectronics, Vol. 34, Iss. 6, 2005-11 ,pp. : 383-385

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Foreword to the special issue on ionizing-radiation effects in microelectronics

By  

Russian Microelectronics, Vol. 35, Iss. 3, 2006-05 ,pp. : 137-137

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Modeling rail-span collapse in ICs exposed to a single radiation pulse

By Chumakov A.  

Russian Microelectronics, Vol. 35, Iss. 3, 2006-05 ,pp. : 156-161

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Predicting the Failure Threshold of Dose Rate for ICs Exposed to Pulsed Ionizing Radiation of Arbitrary Pulse Shape

By Chumakov A. I.   Gontar' V. V.  

Russian Microelectronics, Vol. 33, Iss. 2, 2004-03 ,pp. : 99-105

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Ionizing-Radiation Response of the GaAs/(Al, Ga)As PHEMT: A Comparison of Gamma- and X-ray Results

By Gromov D. V.   Elesin V. V.   Polevich S. A.   Adamov Yu. F.   Mokerov V. G.  

Russian Microelectronics, Vol. 33, Iss. 2, 2004-03 ,pp. : 111-115

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite