Fabrication of undoped semi-insulating InP by multiple-step wafer annealing

By Uchida M.   Kainosho K.   Ohta M.   Oda O.  

Journal of Electronic Materials, Vol. 27, Iss. 1, 1998-12 ,pp. : 10-13

Springer Publishing Company

Access to resources Recommend Favorite

Uniformity of deep levels in semi-insulating InP obtained by multiple-step wafer annealing

By Kuriyama K.   Ushiyama K.   Tsunoda T.   Uchida M.   Yokoyama K.  

Journal of Electronic Materials, Vol. 27, Iss. 5, 1998-05 ,pp. : 462-465

Springer Publishing Company

Access to resources Recommend Favorite

Electrical evaluation of Cu contamination behavior at the backside surface of a thinned wafer by transient capacitance measurement

By Lee K-W   Bea J-C   Fukushima T   Tanaka T   Koyanagi M  

Semiconductor Science and Technology, Vol. 26, Iss. 2, 2011-02 ,pp. : 25007-25010

IOP Publishing

Access to resources Recommend Favorite

Measurement of Sn and In Solidification Undercooling and Lattice Expansion Using In Situ X-Ray Diffraction

By Elmer John  

Journal of Electronic Materials, Vol. 40, Iss. 2, 2011-02 ,pp. : 201-212

Springer Publishing Company

Access to resources Recommend Favorite

A wafer fault diagnosis scheme

By Song Xiaoyu  

International Journal of Electronics, Vol. 87, Iss. 12, 2000-12 ,pp. : 1453-1459

Taylor & Francis Ltd

Access to resources Recommend Favorite