Response Mechanism of the Base-in-Well Bipolar Magnetotransistor

ISSN： 1063-7397

Source： Russian Microelectronics, Vol.34, Iss.3, 2005-05, pp. : 160-172

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Magnetoconcentration effect on a base pn junction of a bipolar magnetotransistor

By Tikhonov R.

Russian Microelectronics, Vol. 39, Iss. 5, 2010-09 ,pp. : 340-351

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Dual-Collector Lateral Bipolar Magnetotransistor: Carrier Transport and Relative Sensitivity

By Kozlov A. V. Reveleva M. A. Tikhonov R. D.

Russian Microelectronics, Vol. 32, Iss. 6, 2003-11 ,pp. : 385-390

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Dual-collector bipolar magnetotransistor: Defining and determining its magnetic-field sensitivity

By Tikhonov R.

Russian Microelectronics, Vol. 38, Iss. 4, 2009-07 ,pp. : 239-250

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Analytical theory of a small signal modulation response of a transistor laser with dots-in-well in the base

By Basu Rikmantra Mukhopadhyay Bratati Basu P K

Semiconductor Science and Technology, Vol. 27, Iss. 1, 2012-01 ,pp. : 15022-15028

IOP Publishing

Access to resources Recommend Favorite

Bounds on bipolar transistor base transit time

By Winterton S. S. Tarr N. G.

International Journal of Electronics, Vol. 81, Iss. 6, 1996-12 ,pp. : 643-646

Taylor & Francis Ltd

Access to resources Recommend Favorite