Author: V’yurkov V. Ananiev S. Lukichev V.
Publisher: MAIK Nauka/Interperiodica
ISSN: 1063-7397
Source: Russian Microelectronics, Vol.34, Iss.6, 2005-11, pp. : 339-343
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Electron transport through broken down ultra-thin SiO 2 layers in MOS devices
Microelectronics Reliability, Vol. 44, Iss. 1, 2004-01 ,pp. :