A generalized theory of charge transport in low-barrier Mott diodes with near-surface δ-doping: Comparison with experimental data

Author： Shashkin V.   Murel’ A.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7397

Source： Russian Microelectronics, Vol.39, Iss.5, 2010-09, pp. : 323-330

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Microwave Detectors Based on Low-Barrier Planar Schottky Diodes and Their Characteristics

By Shashkin V.   Vaks V.   Danil'tsev V.   Maslovsky A.   Murel A.   Nikiforov S.   Khrykin O.   Chechenin Yu.  

Radiophysics and Quantum Electronics, Vol. 48, Iss. 6, 2005-06 ,pp. : 485-490

Springer Publishing Company

Access to resources Recommend Favorite

n-AlGaAs/GaAs/n-AlGaAs double quantum wells with an AlAs barrier: Relating the cladding doping level to structural and transport properties

By Vasil’evskii I.   Galiev G.   Ganin G.   Imamov R.   Klimov E.   Lomov A.   Mokerov V.   Saraikin V.   Chuev M.  

Russian Microelectronics, Vol. 34, Iss. 2, 2005-03 ,pp. : 78-87

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Low-frequency transport and relaxation of charge density waves in (TaSe4)2I crystals

By Smilga Algirdas Paskalis  

International Journal of Electronics, Vol. 81, Iss. 4, 1996-10 ,pp. : 491-499

Taylor & Francis Ltd

Access to resources Recommend Favorite

Numerical simulation of the effect of gold doping on the resistance to neutron irradiation of silicon diodes

By  

Journal of Semiconductors, Vol. 36, Iss. 1, 2015-01 ,pp. : 14001-14005

IOP Publishing

Access to resources Recommend Favorite

Data Transport

By Smith D.  

BT Technology Journal, Vol. 18, Iss. 1, 2000-01 ,pp. : 12-12

Springer Publishing Company

Access to resources Recommend Favorite