n-AlGaAs/GaAs/n-AlGaAs double quantum wells with an AlAs barrier: Relating the cladding doping level to structural and transport properties

Author: Vasil’evskii I.   Galiev G.   Ganin G.   Imamov R.   Klimov E.   Lomov A.   Mokerov V.   Saraikin V.   Chuev M.  

Publisher: MAIK Nauka/Interperiodica

ISSN: 1063-7397

Source: Russian Microelectronics, Vol.34, Iss.2, 2005-03, pp. : 78-87

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