Optical and electrical non-uniformity around dislocations in silicon doped GaAs

By Tajima M.   Toba R.   Ishida N.   Warashina M.  

Materials Science and Technology, Vol. 13, Iss. 11, 1997-11 ,pp. : 949-953

Maney Publishing

Access to resources Recommend Favorite

Characterisation of semi-insulating polysilicon oxygen doped silicon thin films

By Lynch S.   Greef R.   Stoemenos J.   Dartnell N. J.   Lloyd N. S.   Kern P.   Stuck R.   Crean G. M.  

Materials Science and Technology, Vol. 11, Iss. 1, 1995-01 ,pp. : 80-84

Maney Publishing

Access to resources Recommend Favorite

Effect of phosphorus on electrical properties of undoped InP grown at low temperature by atomic layer molecular beam epitaxy

By Postigo P. A.   García-Péerez F.   Dotor M. L.   Golmayo D.   Briones F.  

Materials Science and Technology, Vol. 12, Iss. 2, 1996-02 ,pp. : 187-189

Maney Publishing

Access to resources Recommend Favorite

Growth and characterisation of InP by close vapour transport

By Mimila-Arroyo J.   Diaz J.   Lusson A.   Grattepain C.   Bisaro R.   Bourgoin J. C.  

Materials Science and Technology, Vol. 12, Iss. 2, 1996-02 ,pp. : 178-180

Maney Publishing

Access to resources Recommend Favorite

RAMAN CHARACTERISATION OF NANOCRYSTALLINE SILICON FILMS

By CHIKALOVA-LUZINA O.   MATSUMOTO T.   KONDO M.   VYATKIN V.  

Integrated Ferroelectrics, Vol. 103, Iss. 1, 2008-01 ,pp. : 25-31

Taylor & Francis Ltd

Access to resources Recommend Favorite