Polysilicon in situ phosphorus doping control over large concentration range using low temperature, low pressure chemical vapour deposition growth process

Author: Briand D.   Sarret M.   Le Bihan F.   Bonnaud O.   Pichon L.  

Publisher: Maney Publishing

ISSN: 1743-2847

Source: Materials Science and Technology, Vol.11, Iss.11, 1995-11, pp. : 1207-1209

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract