Optical investigation of deep defects in GaN epitaxial layers grown on 6H-SiC

Author： Pressel K. Nilsson S. Wetzel C. Volm D. Meyer B. K. Loa I. Thurian P. Heitz R. Hoffmann A. Mokhov E. N. Baranov P. G.

Publisher： Maney Publishing

ISSN： 1743-2847

Source： Materials Science and Technology, Vol.12, Iss.1, 1996-01, pp. : 90-93

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