Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixing

By Redondo-Cubero A   Lorenz K   Wendler E   Magalhães S   Alves E   Carvalho D   Ben T   Morales F M   García R   O’Donnell K P   Wetzel C  

Nanotechnology, Vol. 26, Iss. 42, 2015-10 ,pp. : 425703-425708

IOP Publishing

Access to resources Recommend Favorite

Capacitance and drain current deep level transient spectroscopy measurements on molecular beam epitaxy grown GaAs/ln_0·25Ga_0·75As/Al_0·3Ga_0·7As high electron mobility transistors

By Haddab Y.   Py M. A.   Bonard J.-M.   Bühlmann H.-J.   lIegems M.  

Materials Science and Technology, Vol. 11, Iss. 10, 1995-10 ,pp. : 1079-1082

Maney Publishing

Access to resources Recommend Favorite

Electron beam induced current in the high injection regime

By Haney Paul M   Yoon Heayoung P   Koirala Prakash   Collins Robert W   Zhitenev Nikolai B  

Nanotechnology, Vol. 26, Iss. 29, 2015-07 ,pp. : 295401-295410

IOP Publishing

Access to resources Recommend Favorite

Interplay of strain and indium incorporation in InGaN/GaN dot-in-a-wire nanostructures by scanning transmission electron microscopy

By  

Nanotechnology, Vol. 26, Iss. 34, 2015-01 ,pp. : 344002-344011

IOP Publishing

Access to resources Recommend Favorite

Time-resolved photo and radio-luminescence studies demonstrate the possibility of using InGaN/GaN quantum wells as fast scintillators

By  

Nanotechnology, Vol. 26, Iss. 9, 2015-03 ,pp. : 90501-90502

IOP Publishing

Access to resources Recommend Favorite