Large memory window and good retention characteristics of ferroelectric-gate field-effect transistor with Pt/Bi3.4Ce0.6Ti3O12/CeO2/Si structure

Author： Jiang Bo   Tang Minghua   Li Jiancheng   Xiao Yongguang   Tang Zhenhua   Cai Haiquan   Lv Xiaosong   Zhou Yichun  

Publisher： IOP Publishing

ISSN： 0022-3727

Source： Journal of Physics D: Applied Physics, Vol.45, Iss.2, 2012-01, pp. : 25102-25106

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