Growth and properties of III–V compound semiconductor heterostructure nanowires

By Gao Q   Tan H H   Jackson H E   Smith L M   Yarrison-Rice J M   Zou Jin   Jagadish C  

Semiconductor Science and Technology, Vol. 26, Iss. 1, 2011-01 ,pp. : 14035-14044

IOP Publishing

Access to resources Recommend Favorite

Effect of group-III donors on high-resolution photoluminescence and morphology of ZnO nanowires grown by metalorganic vapour phase epitaxy

By Kumar E Senthil   Anderson I.P.   Deng Z.   Mohammadbeigi F.   Wintschel T.   Huang D.   Watkins S.P.  

Semiconductor Science and Technology, Vol. 28, Iss. 4, 2013-04 ,pp. : 45014-45020

IOP Publishing

Access to resources Recommend Favorite

Plasma characteristics and the growth of group III-nitrides by metalorganic molecular beam epitaxy

By Mackenzie J.   Abbaschian L.   Abernathy C.   Donovan S.   Pearton S.   Chow P.   Hove J.  

Journal of Electronic Materials, Vol. 26, Iss. 11, 1997-11 ,pp. : 1266-1269

Springer Publishing Company

Access to resources Recommend Favorite

Growth and properties of GaAs nanowires on fused quartz substrate

By Yufeng Zhao   Xinhua Li   Wenbo Wang   Bukang Zhou   Huahua Duan   Tongfei Shi   Xuesong Zeng   Ning Li   Yuqi Wang  

Journal of Semiconductors, Vol. 35, Iss. 9, 2014-09 ,pp. : 93002-93007

IOP Publishing

Access to resources Recommend Favorite

Nanowires

By Jagadish Chennupati  

Semiconductor Science and Technology, Vol. 25, Iss. 2, 2010-02 ,pp. : 20301-20301

IOP Publishing

Access to resources Recommend Favorite