Plasma-assisted molecular beam epitaxy of Al(Ga)N layers and quantum well structures for optically pumped mid-UV lasers on c-Al₂O₃

By Ivanov S V   Nechaev D V   Sitnikova A A   Ratnikov V V   Yagovkina M A   Rzheutskii N V   Lutsenko E V   Jmerik V N  

Semiconductor Science and Technology, Vol. 29, Iss. 8, 2014-06 ,pp. : 84008-84017

IOP Publishing

Access to resources Recommend Favorite

Analytic modeling of temperature dependence of 2D carrier mobility in as-grown and annealed GaInNAs/GaAs quantum well structures

By  

Semiconductor Science and Technology, Vol. 29, Iss. 12, 2014-12 ,pp. : 125009-125021

IOP Publishing

Access to resources Recommend Favorite

Optically pumped nanowire lasers: invited review

By Zimmler Mariano A   Capasso Federico   Müller Sven   Ronning Carsten  

Semiconductor Science and Technology, Vol. 25, Iss. 2, 2010-02 ,pp. : 24001-24012

IOP Publishing

Access to resources Recommend Favorite

Analytical solution of the Schrodinger equation for an electron confined in a triangle-shaped quantum well

By Gorley P.N.   Vorobiev Y.V.   Gonzalez-Hernandez J.   Horley P.P.  

Microelectronic Engineering, Vol. 66, Iss. 1, 2003-04 ,pp. : 39-45

Elsevier

Access to resources Recommend Favorite

Temperature dependence of electron transport on a bound-to-continuum terahertz quantum cascade laser

By Han Y J   Cao J C  

Semiconductor Science and Technology, Vol. 27, Iss. 1, 2012-01 ,pp. : 15002-15006

IOP Publishing

Access to resources Recommend Favorite